surface mount switching diode *low current leakage *low forward voltage *reverse recover time trr4ns *small outline surface mount sot-23 package featu r es: unit:mm dim a b c d e g h j k l m 0 . 3 5 1 . 1 9 2 . 1 0 0 . 8 5 0 . 4 6 1 . 7 0 2 . 7 0 0 . 0 1 0 . 8 9 0 . 3 0 0 . 0 7 6 0 . 5 1 1 . 4 0 3 . 0 0 1 . 0 5 1 . 0 0 2 . 1 0 3 . 1 0 0 . 1 3 1 . 1 0 0 . 6 1 0 . 2 5 a b d e g m l h j t o p v i e w k c 1 2 3 MMBD1009 mmbd1011 switching diode 200m amperes 75 volts sot-23 sot-23 outline dimensions min max weitron http://www.weitron.com.tw 1/4 22-sep-05 lead(pb)- f r ee p b
unit characteristic symbol min max electrical characteristics ( t a=25?c unless otherwise note) (each diode) off characteristics a dc r e v erse b r eakd o wn v oltage i br =100 a dc r e v erse v oltage l ea k age c u r r e n t v r =50v v br i r 75 v dc 0.1 - - maximum ratings characteristic r e v erse v oltage average f o r w a r d c u r r e n t p eak f o r w a r d su r ge c u r r e n t symbol v r unit v olts v alue 75 200 500 m a dc m a dc i o i f m thermal characteristics characteristic symbol t otal d evi c e dissip a tion fr-5 b oa r d * 1 , t a=25?c d e r a t e ab o v e 25?c t otal d evi c e dissip a tion alumina subst r a t e * 2 t a=25?c d e r a t e ab o v e 25?c p d p d max unit t he r mal r esistan c e jun c tion t o ambie n t t he r mal r esistan c e jun c tion t o ambie n t jun c tion and s t o r age t empe r a tu r e r ja t j , t s t g 225 1.8 556 300 2.4 417 -55 t o + 150 mw mw/ ? c mw mw/ ? c ? c/w ? c/w ?c *1 er-5=1.0x0.75x0.062 in *2 alumina=0.4x0.3x0.024 in 99.5% alumina r ja weitron http://www.weitron.com.tw 2/4 22-sep-05 MMBD1009 mmbd1011
off characteristic unit characteristic symbol min max diode capacition forward voltage i f =10 madc i f =50 madc i f =100 madc reverse recovery time (figure 1.) i f =i r =10 madc, v r =5.0vdc i r(rec) =1.0 madc, r l =100 c d v f t rr 4.0 - - - 4.0 pf mvdc ns device marking item marking eqivalent circuit diagram 1 2 3 MMBD1009 mmbd1011 a2 a6 1000 1000 1200 +10v 820 2.0k 100 h 0.1f 50 output pulse generator 50 input sampling oscilloscope i f d.u.t. 0.1f v r input signal t r t p 10% 90% t i f i r t rr t i r(rec) =1.0ma output pulse (i f =i r =10ma, measured at i r(rec) =1.0ma notes:1. a 2.0 k variable resistor for a forward current (i f ) 0f 10 ma 2. input pules is adjusted so i r (peak) is equal to 10 ma 3. t p ? t rr figure 1. recovery time equivalent test circuit v r =0, f=1.0mhz weitron http://www.weitron.com.tw 3/4 22-sep-05 MMBD1009 mmbd1011 1 2 3
0.2 0.4 0.6 0.8 1.0 1.2 v f , forward voltage (volts) 100 10 1.0 0.1 i f , forward current (ma) figure 2 .forward voltage t a =-40 c t a =25 c t a =85 c 0 10 20 30 40 50 v r . reverse voltage (volts) i a . reverse current (a) 10 1.0 0.1 0.01 0.001 t a =150 c t a =125 c t a =25 c t a =55 c t a =85 c figure 3. leakage current v r . reverse voltage (volts) c d . diode capacitance ( p f) figure 4. capacitance(2836) 0 2.0 4.0 6.0 8.0 1.75 1.50 1.25 1.00 0.75 v r . reversw voltage (volts) c d . diode capacitance ( p f) figure 6. capacitance(7000) 0 2.0 4.0 6.0 8.0 0.68 0.64 0.60 0.56 0.52 v r . reversw voltage (volts) c d . diode capacitance ( p f) figure 5. capacitance(2838) 0 2 4 6 8 1.0 0.9 0.8 0.7 0.6 weitron http://www.weitron.com.tw 4/4 22-sep-05 MMBD1009 mmbd1011
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